Patent for Sale:

Semiconductor Manufacturing for LED, Power Transistors and other Applications    

Portfolio with Priority Dates of 2003

Techniques for growing gallium nitride on a silicon wafer enables a single crystal GaN film to be grown thicker than 2 microns without cracks or pits. Inventions also cover they layering of, zinc oxides onto silicon substrates.

Semiconductor fabrication technology. Specifically, reusable substrate base for production of a multilayer semiconductor device e.g. LEDs and power transistors, silicon substrate for growing single crystal GaN film and light-emitting diode and power transistor used in integrated circuit for power sources and switches.

Class 257: Active Solid-State Devices (E.G., Transistors, Solid-State Diodes)

This class provides for active solid-state electronic devices, that is, electronic devices or components that are made up primarily of solid materials, usually semiconductors, which operate by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action, and are not classified elsewhere.

Subclass 14: Quantum well
Subclass 76: SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS
Subclass E21.112: Deposition on a semiconductor substrate not being Group III-V compound (EPO)
Subclass E21.127: Group III-V compound on Si or Ge (EPO)

Class 438: Semiconductor Device Manufacturing: Process

This class provides for manufacturing a semiconductor containing a solid-state device for the following purposes: (a) conducting or modifying an electrical current, (b) storing electrical energy for subsequent discharge within a microelectronic integrated circuit, or (c) converting electromagnetic wave energy to electrical energy or electrical energy to electromagnetic energy. Also operations involving: (1) coating a substrate with a semiconductive material, or (2) coating a semiconductive substrate or substrate containing a semiconductive region. It also provides for operations involving etching a semiconductive substrate or etching a substrate containing a semiconductive region. The class provides for packaging or treatment of packaged semiconductor.

Subclass 478: FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)

Class 117: Single-Crystal, Oriented-Crystal, And Epitaxy Growth Processes; Non-Coating Apparatus Therefor

Processes consisting of the single or repeated unit operation of forming a single-crystal of any type of material, including inorganic or organic; such processes combined with perfecting operations; and apparatus for conducting non-coating processes of this class.

Subclass 104: Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE)
Subclass 89: Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
Subclass 90: With pretreatment of substrate (e.g., coacting ablating)
Subclass 91: With a chemical reaction (except ionization) in a disparate zone to form a precursor
Subclass 94: With pretreatment or preparation of a base (e.g., annealing)