Patent for Sale:

Direct Current Plasma Immersion Ion Implantation    

A technique/equipment for plasma immersion ion implantation (PIII) for DC/long pulse length quasi-DC techniques.


The technology relates to a PIII technique performed in a low pressure steady state direct current and long-pulse mode utilizing a grounded/biased conducting grid positioned between the wafer stage and plasma source. The plasma sheath propagation is stopped by the grid to avoid plasma extinction.

This technique obviates the use of the power modulator which limits the implantation energy and is the most expensive and technologically complex hardware component in a PIII system. The new technique can be conducted in the long-pulse PIII mode which is difficult by conventional PIII technology.

Primary Application of the Technology

Plasma Immersion Ion Implantation has found many applications in the microelectronics, biomedical and materials industry. The new technique extends Plasma Immersion Ion Implantation to industrial applications in which high implantation energy is required.