Patent Portfolio for Sale:Electron Devices & Memory and Storage
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Class 313: Electric Lamp And Discharge DevicesThis is the generic class for electric lamp and electric space discharge device structure. Examples of such devices are electric incandescent lamps, gas or vapor filled electric discharge tubes, including lamps, mercury arc devices, vacuum discharge tubes, radio tubes, cyclotrons, cathode-ray tubes, photosensitive discharge devices, secondary emission electron multipliers, spark plugs, and open air arc and spark devices.
Subclass 309: DISCHARGE DEVICES HAVING A MULTIPOINTED OR SERRATED EDGE ELECTRODE
Subclass 310: DISCHARGE DEVICES HAVING A THERMIONIC OR EMISSIVE CATHODE
Subclass 311: DISCHARGE DEVICES HAVING AN ELECTRODE OF PARTICULAR MATERIAL
Subclass 336: Point source cathodes
Subclass 346R: Cathodes containing and/or coated with electron emissive material
Subclass 351: Multipointed or serrated edge electrode
Subclass 495: Vacuum-type tube
Subclass 499: Semiconductor depletion layer type
Class 369: Dynamic Information Storage Or RetrievalApparatus for the storage or retrieval of arbitrarily variable information which is retained in a storage medium by variation of a physical characteristic. The information is stored or retrieved by causing or sensing a variation of a physical characteristic of the storage medium by a transducer having relative motion along a continuous path.
Subclass 100: Radiation beam modification of or by storage medium
Subclass 101: Invisible radiation (e.g., electron beam or X-ray)
Subclass 126: Electrical modification or sensing of storage medium (e.g., capacitive, resistive, electrostatic charge)
Class 977: NanotechnologyThis art collection provides for disclosures related to: nanostructure and chemical compositions of nanostructure; device that include at least one nanostructure; mathematical algorithms, e.g., computer software, etc., specifically adapted for modeling configurations or properties of nanostructure; methods or apparatus for making, detecting, analyzing, or treating nanostructure; and specified particular uses of nanostructure. the term "nanostructure" is defined to mean an atomic, molecular, or macromolecular structure that: has at least one physical dimension of approximately 1-100 nanometers; and possesses a special property, provides a special function, or produces a special effect that is uniquely attributable to the structure s nanoscale physical size.
Subclass 849: With scanning probe
Subclass 861: Scanning tunneling probe
Subclass 863: Atomic force probe
Subclass 869: Optical microscope
Subclass 881: Microscopy or spectroscopy (e.g., SEM, TEM, etc.)
Subclass 943: Information storage or retrieval using nanostructure
Subclass 939: Electron emitter (e.g., Spindt emitter tip coated with nanoparticles, etc.)
Class 445: Electric Lamp Or Space Discharge Component Or Device ManufacturingThis is the residual and generic class of process and apparatus for the manufacturing, fabrication, repair, salvage, assembly, disassembly or other treatment of an electric lamp, liquid crystal display device or an electric space discharge device which process or apparatus is not elsewhere classified.
Subclass 46: Electrode making
Subclass 23: With assembly or disassembly
Class 252: Compositions(A) Compositions of matter, having or not having structure, physical form or heterogeneous arrangement of components and for which there is no provision elsewhere. (B) Packages of such compositions, or other articles which include such compositions for which there is no provision elsewhere. (C) Processes of making, or peculiar to making, such compositions and for which there is no provision elsewhere. (D) Apparatus for use in or peculiar to such processes and for which there is no provision elsewhere.
Subclass 502: Elemental carbon containing
Class 365: Static Information Storage And RetrievalApparatus or corresponding processes for the static storage and retrieval of information. For classification herein, the storage system must be (1) static, (2) a singular storage element or plural elements of the same type, (3) addressable.
Subclass 118: Electron beam
Subclass 128: Electron beams
Subclass 151: Molecular or atomic
Class 438: Semiconductor Device Manufacturing: ProcessThis class provides for manufacturing a semiconductor containing a solid-state device for the following purposes: (a) conducting or modifying an electrical current, (b) storing electrical energy for subsequent discharge within a microelectronic integrated circuit, or (c) converting electromagnetic wave energy to electrical energy or electrical energy to electromagnetic energy. Also operations involving: (1) coating a substrate with a semiconductive material, or (2) coating a semiconductive substrate or substrate containing a semiconductive region. It also provides for operations involving etching a semiconductive substrate or etching a substrate containing a semiconductive region. The class provides for packaging or treatment of packaged semiconductor.
Subclass 20: ELECTRON EMITTER MANUFACTURE
Subclass 22: MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL
Subclass 380: AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
Subclass 424: Grooved and refilled with deposited dielectric material
Subclass 45: Dopant introduction into semiconductor region
Subclass 47: Heterojunction
Subclass 570: FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)
Subclass 960: POROUS SEMICONDUCTOR
Class 257: Active Solid-State Devices (E.G., Transistors, Solid-State Diodes)This class provides for active solid-state electronic devices, that is, electronic devices or components that are made up primarily of solid materials, usually semiconductors, which operate by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action, and are not classified elsewhere.
Subclass 199: Avalanche diode (e.g., so-called Zener diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)
Subclass 653: WITH SPECIFIED SHAPE OF PN JUNCTION
Subclass 11: Combined with a heterojunction involving a III-V compound
Subclass 10: Low workfunction layer for electron emission (e.g., photocathode electron emissive layer)
Subclass 87: With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)
Subclass 618: PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)
Subclass 603: AVALANCHE DIODE (E.G., SO-CALLED ZENER DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
Subclass 600: With physical configuration to vary voltage dependence (e.g., mesa)
Subclass 591: With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Subclass 589: Avalanche transistor
Subclass 103: With particular semiconductor material
Class 250: Radiant EnergyThis class provides for all methods and apparatus for using, generating, controlling or detecting radiant energy, combinations including such methods or apparatus, subcombinations of same and accessories therefore not classifiable elsewhere.
Subclass 492.3: Ion or electron beam irradiation
Subclass 251: ELECTRICALLY NEUTRAL MOLECULAR OR ATOMIC BEAM DEVICES AND METHODS