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Private Listing: Number 1812 Private  

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Patent Summary

U.S. Patent Classes & Classifications Covered in this listing:

Class 313: Electric Lamp And Discharge Devices

This is the generic class for electric lamp and electric space discharge device structure. Examples of such devices are electric incandescent lamps, gas or vapor filled electric discharge tubes, including lamps, mercury arc devices, vacuum discharge tubes, radio tubes, cyclotrons, cathode-ray tubes, photosensitive discharge devices, secondary emission electron multipliers, spark plugs, and open air arc and spark devices.

Subclass 495: Vacuum-type tube
Subclass 499: Semiconductor depletion layer type
Subclass 309: DISCHARGE DEVICES HAVING A MULTIPOINTED OR SERRATED EDGE ELECTRODE
Subclass 310: DISCHARGE DEVICES HAVING A THERMIONIC OR EMISSIVE CATHODE
Subclass 311: DISCHARGE DEVICES HAVING AN ELECTRODE OF PARTICULAR MATERIAL
Subclass 336: Point source cathodes
Subclass 346R: Cathodes containing and/or coated with electron emissive material
Subclass 351: Multipointed or serrated edge electrode

Class 257: Active Solid-State Devices (E.G., Transistors, Solid-State Diodes)

This class provides for active solid-state electronic devices, that is, electronic devices or components that are made up primarily of solid materials, usually semiconductors, which operate by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action, and are not classified elsewhere.

Subclass 2: Bulk effect switching in amorphous material
Subclass 3: With means to localize region of conduction (e.g., pore structure)
Subclass 4: With specified electrode composition or configuration
Subclass 5: In array
Subclass 10: Low workfunction layer for electron emission (e.g., photocathode electron emissive layer)
Subclass 11: Combined with a heterojunction involving a III-V compound
Subclass 42: SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM
Subclass 79: INCOHERENT LIGHT EMITTER STRUCTURE
Subclass 80: In combination with or also constituting light responsive device
Subclass 86: Active layer of indirect band gap semiconductor
Subclass 87: With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)
Subclass 103: With particular semiconductor material
Subclass 199: Avalanche diode (e.g., so-called Zener diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)
Subclass 214: Charge injection device
Subclass 298: Capacitor for signal storage in combination with non-volatile storage means
Subclass 350: Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.)
Subclass 432: With optical element
Subclass 436: With means for increasing light absorption (e.g., redirection of unabsorbed light)
Subclass 444: Light sensor elements overlie active switching elements in integrated circuit (e.g., where the sensor elements are deposited on an integrated circuit)
Subclass 461: Light responsive pn junction
Subclass 589: Avalanche transistor
Subclass 591: With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Subclass 600: With physical configuration to vary voltage dependence (e.g., mesa)
Subclass 603: AVALANCHE DIODE (E.G., SO-CALLED ZENER DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
Subclass 613: INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GAAS) (E.G., PB X SN 1-X TE)
Subclass 614: Group II-VI compound (e.g., CdTe, Hg x Cd 1-x Te)
Subclass 618: PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)
Subclass 653: WITH SPECIFIED SHAPE OF PN JUNCTION
Subclass E27.004: Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (EPO)
Subclass E45.002: Bistable switching devices, e.g., Ovshinsky-effect devices (EPO)
Subclass E21.068: Device having semiconductor body comprising selenium (Se) or tellurium (Te) (EPO)

Class 369: Dynamic Information Storage Or Retrieval

Apparatus for the storage or retrieval of arbitrarily variable information which is retained in a storage medium by variation of a physical characteristic. The information is stored or retrieved by causing or sensing a variation of a physical characteristic of the storage medium by a transducer having relative motion along a continuous path.

Subclass 13.14: Magnetic field generation
Subclass 100: Radiation beam modification of or by storage medium
Subclass 101: Invisible radiation (e.g., electron beam or X-ray)
Subclass 121: With particular light source (e.g., laser, CRT with phosphor)
Subclass 126: Electrical modification or sensing of storage medium (e.g., capacitive, resistive, electrostatic charge)
Subclass 275.2: Erasable, reversible or re-recordable

Class G9B/11.007:


Class G9B/9.025:


Class 438: Semiconductor Device Manufacturing: Process

This class provides for manufacturing a semiconductor containing a solid-state device for the following purposes: (a) conducting or modifying an electrical current, (b) storing electrical energy for subsequent discharge within a microelectronic integrated circuit, or (c) converting electromagnetic wave energy to electrical energy or electrical energy to electromagnetic energy. Also operations involving: (1) coating a substrate with a semiconductive material, or (2) coating a semiconductive substrate or substrate containing a semiconductive region. It also provides for operations involving etching a semiconductive substrate or etching a substrate containing a semiconductive region. The class provides for packaging or treatment of packaged semiconductor.

Subclass 102: HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT
Subclass 20: ELECTRON EMITTER MANUFACTURE
Subclass 22: MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL
Subclass 238: Including passive device (e.g., resistor, capacitor, etc.)
Subclass 380: AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
Subclass 381: MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.)
Subclass 389: Including doping of trench surfaces
Subclass 424: Grooved and refilled with deposited dielectric material
Subclass 45: Dopant introduction into semiconductor region
Subclass 47: Heterojunction
Subclass 570: FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)
Subclass 900: BULK EFFECT DEVICE MAKING
Subclass 93: Compound semiconductor
Subclass 95: Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing
Subclass 96: Amorphous semiconductor
Subclass 960: POROUS SEMICONDUCTOR

Class 250: Radiant Energy

This class provides for all methods and apparatus for using, generating, controlling or detecting radiant energy, combinations including such methods or apparatus, subcombinations of same and accessories therefore not classifiable elsewhere.

Subclass 251: ELECTRICALLY NEUTRAL MOLECULAR OR ATOMIC BEAM DEVICES AND METHODS
Subclass 306: INSPECTION OF SOLIDS OR LIQUIDS BY CHARGED PARTICLES
Subclass 307: Methods
Subclass 492.3: Ion or electron beam irradiation

Class 850:


Class G9B/9.001:


Class G9B/9.002:


Class G9B/9.003:


Class 977: Nanotechnology

This art collection provides for disclosures related to: nanostructure and chemical compositions of nanostructure; device that include at least one nanostructure; mathematical algorithms, e.g., computer software, etc., specifically adapted for modeling configurations or properties of nanostructure; methods or apparatus for making, detecting, analyzing, or treating nanostructure; and specified particular uses of nanostructure. the term "nanostructure" is defined to mean an atomic, molecular, or macromolecular structure that: has at least one physical dimension of approximately 1-100 nanometers; and possesses a special property, provides a special function, or produces a special effect that is uniquely attributable to the structure s nanoscale physical size.

Subclass 849: With scanning probe
Subclass 861: Scanning tunneling probe
Subclass 863: Atomic force probe
Subclass 873: Tip holder
Subclass 881: Microscopy or spectroscopy (e.g., SEM, TEM, etc.)
Subclass 939: Electron emitter (e.g., Spindt emitter tip coated with nanoparticles, etc.)
Subclass 943: Information storage or retrieval using nanostructure

Class G9B/23:


Class G9B/9.004:


Class G9B/9.006:


Class G9B/9.007:


Class G9B/20.009:


Class 445: Electric Lamp Or Space Discharge Component Or Device Manufacturing

This is the residual and generic class of process and apparatus for the manufacturing, fabrication, repair, salvage, assembly, disassembly or other treatment of an electric lamp, liquid crystal display device or an electric space discharge device which process or apparatus is not elsewhere classified.

Subclass 23: With assembly or disassembly
Subclass 46: Electrode making

Class G9B/9.024:


Class G9B/13:


Class 252: Compositions

(A) Compositions of matter, having or not having structure, physical form or heterogeneous arrangement of components and for which there is no provision elsewhere. (B) Packages of such compositions, or other articles which include such compositions for which there is no provision elsewhere. (C) Processes of making, or peculiar to making, such compositions and for which there is no provision elsewhere. (D) Apparatus for use in or peculiar to such processes and for which there is no provision elsewhere.

Subclass 502: Elemental carbon containing

Class G9B/11.001:


Class G9B/9.008:


Class G9B/9.011:


Class 365: Static Information Storage And Retrieval

Apparatus or corresponding processes for the static storage and retrieval of information. For classification herein, the storage system must be (1) static, (2) a singular storage element or plural elements of the same type, (3) addressable.

Subclass 33: Magnetic storage material
Subclass 34: Amorphous
Subclass 148: Resistive
Subclass 151: Molecular or atomic
Subclass 163: Amorphous (electrical)
Subclass 217: Electron beam
Subclass 237: Electron beam

Class G9B/9:


Class G9B/9.013:


Class 428: Stock Material Or Miscellaneous Articles

This is the residual class for: 1. Stock material in the form of a structurally defined web, sheet, rod, strand, fiber, filament, cell, flake, particle not provided elsewhere. 2. Stock material in the form of a web, sheet, mass or layer which consists of or contains a structurally defined constituent or element. 3. A nonstructural laminate defined merely in terms of the composition of one or more layers. 4. An article of manufacture or an intermediate-article not provided for elsewhere. 5. A process for applying an impregnating material to a naturally solid product such as a wood beam, a sheet of leather or a stone, or for applying a coating to a base, and which process includes no significant method step.

Subclass 64.1: CIRCULAR SHEET OR CIRCULAR BLANK
Subclass 64.4: Optical recording medium or carrier
Subclass 64.5: Tellurium containing
Subclass 64.6: Protective layer

Class 430: Radiation Imagery Chemistry: Process, Composition, Or Product Thereof

This is the generic class for: (1) Forming the likeness of an object, or an instrumented or discernible phenomenon, in a chemically defined receiver or in a receiver wherein radiation produces a chemical reaction, by use of radiation. (2) Finishing an image by chemical processing regardless how formed. (3) A radiation sensitive receiver, composition, or product disclosed solely for radiation imagery chemistry, and process of making same. (4) A nonradiation sensitive-receiver, composition, or product. (5) An imaged product by a process or employing a receiver, composition, or product.

Subclass 270.13: Which changes phase during recording

Class G9B/7.186:


Class G9B/9.009:


Class G9B/7.145:


Class G9B/7.147:


Class G9B/9.005:


Class G9B/7.014:


Class G9B/7.189: