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Technology for Sale:Dual-sided SONOS Cell NAND Array
Novel NAND array architecture that allows SONOS cells to be programmed and store dual-side data.
The conventional NAND array using FG or SONOS cells can only select the drain side of the cells and apply the programming voltage to the drain side of the cells only. It cannot apply the programming voltage to the source side of the cell, thus it cannot realize the dual-side storage of the SONOS cell. This invention discloses a novel NAND array architecture that allows both the drain and source sides of the cells being selected individually, thus the programming voltage can be applied to the drain or source side of the cells to program different data in dual-side of the cells. This doubles the storage density of the conventional NAND array. Moreover, this invention discloses a method to program multiple levels of Vt (MLC) to each side of the cells. The detailed array architecture, Vt distribution, programming condition, operation flow, and the control circuit are disclosed in the patent applications.
The Problem Solved by the Technology
The conventional NAND array architecture can only select the drain side of the cell and provides the programming voltage to the drain side only. It does not have the capability to select and apply the programming voltage to the source side of the cell, so it cannot realize the dual-side storage of the SONOS cell. This invention discloses a novel array architecture to provide the programming voltage to both the drain side and source side of the cells to store data in dual-side of the cells.
How the Technology Solves the Problem
This invention discloses a novel NAND array architecture that provides a special arrangement of the arrays metal bit line, source line, and the decoder. It allows both the bit line and source line of each SONOS cell being selected individually, so the programming voltage can be applied to the drain side or the source side to program different data in dual-side of the cells.
Primary Application of the Technology
The targeted market is aimed at current data-storage NAND flash markets such as MP3, Digital camera and cell phone, etc.
Other Potential Applications
SDD (semiconductor disk drive) is another market for this technology.
This patented dual-sided SONOS NAND has potential to half the current NAND flash costs.
Notes on Development Status
This dual-sided NAND is currently a patented concept and design. It requires NAND flash suppliers to deploy this concept and verify it on silicon.
Comments on Deal Structure, Potential Terms and Restrictions
This technology requires are large Flash memory manufacturer to commercialize. The developer is prepared to consider any sensible deal structures with appropriate candidates to bring this technology to market.
View this listing on the Tynax website: www.tynax.com/listing/1397