Tynax ~ Patent Library

Patent Portfolio for Sale:

Portfolio of Memory Patents    

Twenty seven patents available for sale.


This family of patents covers areas such as overpass mask, insulator, feedback latch, semiconductor trench capacitor cell, transistor, capacitor, SRAM, DRAM cell, segmented DRAM, CAM, FERAM cell, silicide resistor, non-planar memory, bonding, fabrication, VLSI circuits.

The patent numbers will only be provided to pre-qualified buyers or licensees. Please provide a profile of your organization when submitting your "Tell Me More" request.

Patent Summary

U.S. Patent Classes & Classifications Covered in this Patent Portfolio:

Class 438: Semiconductor Device Manufacturing: Process

This class provides for manufacturing a semiconductor containing a solid-state device for the following purposes: (a) conducting or modifying an electrical current, (b) storing electrical energy for subsequent discharge within a microelectronic integrated circuit, or (c) converting electromagnetic wave energy to electrical energy or electrical energy to electromagnetic energy. Also operations involving: (1) coating a substrate with a semiconductive material, or (2) coating a semiconductive substrate or substrate containing a semiconductive region. It also provides for operations involving etching a semiconductive substrate or etching a substrate containing a semiconductive region. The class provides for packaging or treatment of packaged semiconductor.

Subclass 157: Plural gate electrodes (e.g., dual gate, etc.)
Subclass 239: Capacitor
Subclass 240: Having high dielectric constant insulator (e.g., Ta2O5, etc.)
Subclass 243: Trench capacitor
Subclass 244: Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Subclass 245: With epitaxial layer formed over the trench
Subclass 248: Including isolation means formed in trench
Subclass 253: Stacked capacitor
Subclass 257: Having additional gate electrode surrounded by dielectric (i.e., floating gate)
Subclass 260: Textured surface of gate insulator or gate electrode
Subclass 269: Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
Subclass 270: Gate electrode in trench or recess in semiconductor substrate
Subclass 283: Plural gate electrodes (e.g., dual gate, etc.)
Subclass 300: Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)
Subclass 586: Combined with formation of ohmic contact to semiconductor region
Subclass 587: Forming array of gate electrodes
Subclass 595: Having sidewall structure
Subclass 792: Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
Subclass 791: Silicon nitride formation
Subclass 790: Organic reactant
Subclass 397: Including selectively removing material to undercut and expose storage node layer
Subclass 396: Stacked capacitor
Subclass 393: Planar capacitor
Subclass 386: Trench capacitor
Subclass 683: Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Subclass 682: Silicide
Subclass 672: Plug formation (i.e., in viahole)
Subclass 671: Utilizing multilayered mask
Subclass 656: Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Subclass 655: Silicide
Subclass 649: Silicide
Subclass 633: Simultaneously by chemical and mechanical means
Subclass 620: Forming contacts of differing depths into semiconductor substrate
Subclass 424: Grooved and refilled with deposited dielectric material

Class 257: Active Solid-State Devices (E.G., Transistors, Solid-State Diodes)

This class provides for active solid-state electronic devices, that is, electronic devices or components that are made up primarily of solid materials, usually semiconductors, which operate by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action, and are not classified elsewhere.

Subclass 295: With ferroelectric material layer
Subclass 296: Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)
Subclass 301: Capacitor in trench
Subclass 302: Vertical transistor
Subclass 303: Stacked capacitor
Subclass 304: Storage node isolated by dielectric from semiconductor substrate
Subclass 305: With means to insulate adjacent storage nodes (e.g., channel stops or field oxide)
Subclass 306: Stacked capacitor
Subclass 309: With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes)
Subclass 310: With high dielectric constant insulator (e.g., Ta 2 O 5 )
Subclass 315: With floating gate electrode
Subclass 337: In integrated circuit structure
Subclass 346: Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)
Subclass 347: Single crystal semiconductor layer on insulating substrate (SOI)
Subclass 382: With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
Subclass 384: Including silicide
Subclass 387: Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate)
Subclass 388: Gate electrode consists of refractory or platinum group metal or silicide
Subclass 410: Gate insulator includes material (including air or vacuum) other than SiO 2
Subclass 412: Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)
Subclass 413: Polysilicon laminated with silicide
Subclass 506: Including dielectric isolation means
Subclass 752: Planarized to top of insulating layer
Subclass 754: At least one layer of silicide or polycrystalline silicon
Subclass E21.004: Of resistor (EPO)
Subclass E21.008: Of capacitor (EPO)
Subclass E21.009: Dielectric having perovskite structure (EPO)
Subclass E21.019: Made by depositing layers, e.g., alternatingly conductive and insulating layers (EPO)
Subclass E21.021: Having multilayers, e.g., comprising barrier layer and metal layer (EPO)
Subclass E21.165: Conductive layer comprising silicide (EPO)
Subclass E21.415: Monocrystalline silicon transistor on insulating substrate, e.g., quartz substrate (EPO)
Subclass E21.59: Local interconnects; local pads (EPO)
Subclass E21.632: Complementary field-effect transistors, e.g., CMOS (EPO)
Subclass E21.634: With particular manufacturing method of source or drain, e.g., specific S or D implants or silicided S or D structures or raised S or D structures (EPO)
Subclass E21.648: Capacitor stacked over transfer transis tor (EPO)
Subclass E21.649: Making connection between transistor and capacitor, e.g., plug (EPO)
Subclass E21.651: Capacitor in U- or V-shaped trench in substrate (EPO)
Subclass E21.652: In combination with vertical transistor (EPO)
Subclass E21.657: Making bit line (EPO)
Subclass E21.66: Simultaneous fabrication of periphery and memory cells (EPO)
Subclass E21.664: With ferroelectric capacitor (EPO)
Subclass E27.088: With capacitor higher than bit line level (EPO)
Subclass E27.096: Vertical transistor (EPO)
Subclass E27.104: Ferroelectric non-volatile memory structure (EPO)
Subclass E29.275: With multiple gates (EPO)
Subclass E29.286: Monocrystalline only (EPO)
Subclass E29.297: Comprising Group IV non-Si semiconductor materials or alloys (e.g., Ge, SiN alloy, SiC alloy) (EPO)
Subclass E29.298: With multilayer structure or superlattice structure (EPO)
Subclass E29.156: Including silicide layer contacting silicon layer (EPO)
Subclass E29.137: Characterized by configuration of gate stack of thin film FETs (EPO)
Subclass E21.579: For dual damascene type structures (EPO)
Subclass E21.575: Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (EPO)
Subclass E21.567: Using bonding technique (EPO)
Subclass E21.564: SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO)
Subclass E21.293: Of silicon nitride (EPO)
Subclass 486: Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer)

Class 365: Static Information Storage And Retrieval

Apparatus or corresponding processes for the static storage and retrieval of information. For classification herein, the storage system must be (1) static, (2) a singular storage element or plural elements of the same type, (3) addressable.

Subclass 149: Capacitors
Subclass 189.05: Having particular data buffer or latch
Subclass 189.07: Including signal comparison
Subclass 203: Precharge
Subclass 205: Flip-flop used for sensing
Subclass 207: Differential sensing
Subclass 222: Data refresh
Subclass 230.08: Including particular address buffer or latch circuit arrangement

Class 313: Electric Lamp And Discharge Devices

This is the generic class for electric lamp and electric space discharge device structure. Examples of such devices are electric incandescent lamps, gas or vapor filled electric discharge tubes, including lamps, mercury arc devices, vacuum discharge tubes, radio tubes, cyclotrons, cathode-ray tubes, photosensitive discharge devices, secondary emission electron multipliers, spark plugs, and open air arc and spark devices.

Subclass 512: With envelope or encapsulation

Class 361: Electricity: Electrical Systems And Devices

Systems or devices which provide safety and protection for other systems and devices; control circuits for electromagnetic devices and non-electromagnetic-type relays. Systems or devices which discharge, or prevent the accumulation of electrical charge on or in an object or material; circuits for charging objects or materials. Systems for generating or conducting an electric charge. Systems which process electrical speed signals. Circuits for reversing the polarity of an electric circuit. Systems which cause the ignition of a fuel or an explosive charge. Systems and processes for demagnetizing a magnetic field. Transformers and inductors with integral switch, capacitor or lock. Electrostatic capacitors, per se. Housings and mounting assemblies with plural diverse electrical components. Electrolytic systems and devices.

Subclass 301.4: Stack
Subclass 312: Plural dielectrics
Subclass 313: Layered
Subclass 321.2: With multilayer ceramic capacitor
Subclass 792: Plural contiguous boards
Subclass 794: Power, voltage, or current layer
Subclass 321.4: Composition
Subclass 321.3: Including metallization coating

Class 174: Electricity: Conductors And Insulators

This class is for inventions relating to the structure of electrical conductors and insulators and insulators and the apparatus specialized to mounting, supporting, encasing in conduits, and/or housing the same. Conductors may be bare or be encased in insulation, may be single strand or plural strand, may be of single conductor form or there may be a plurality of conductors associated together to form a cable. Since all materials that have the property of being conductors of electricity and all devices made therefrom may be termed electrical conductors, only those structures that are specially designed to conduct electricity as their proximate purpose are placed in this class. Insulators are placed here when the structure thereof is claimed, which structure is specially designed for spacing two or more devices of different electrical potential from each other or for spacing one or more devices from ground. Since all materials which are poor conductors of electricity and devices made therefrom may be termed electrical insulators, only those structures whose proximate purpose is that already stated. Conduits are placed in this class only when some characteristic is claimed which limits the same to the electrical use.

Subclass 261: With particular conductive connection (e.g., crossover)

Class 711: Electrical Computers And Digital Processing Systems: Memory

This class provides, within an electrical computer or digital data processing system, for the following processes and apparatus 1. for addressing memory wherein the processes and apparatus involve significant address manipulating (e.g., combining, translating, or mapping and other techniques for formatting and modifying address data) and are combined with specific memory configurations or memory systems; 2. for accessing and controlling memory (e.g., transferring and modifying address data, selecting storage devices, scheduling access); and 3. for forming memory addresses (e.g., virtual memory addressing, address translating, translation-lookaside buffers (TLBs), boundary checking, and page mode).

Subclass 105: Dynamic random access memory

Class 238: Railways: Surface Track

Surface railway-tracks which in their make-up include road-bed structure, rail-supporting elements­­­­­­­—such as stringers, ties, rail-chairs, and tie-plates-rails—rail-joints, rail-bonds, track and rail-joint fastenings, and electric insulation as applied to ties, rails, rail-joints, rail-bonds, and track-fastenings.

Subclass 3: Highway track
Subclass 241: Longitudinal
Subclass 239: Twin
Subclass 210: Top flange