Seeking U.S. Patents For MRAM/FeRAM Memory Technology
Specially interested in magnetic memory device designs & manufacturing methods
Overview
Unlike conventional RAM chip technologies, in MRAM data is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetic field, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity, the other's field will change to match that of an external field. A memory device is built from a grid of such "cells".
Patents and Intellectual Property Requested
We have budget to acquire U.S. issued patents with families of international counterparts.
Deal Structure, Licensing and Ownership of
Intellectual Property
We are happy to consider providing a back-license if you wish to continue using the patented inventions in your own products.
Additional Information
If you have patents related to MRAM or FeRAM, please let us know by providing the patent numbers. We will study and evaluate the inventions from the public patent records and let you know our level of interest within a matter of weeks.
